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Solid State Broadband High Power Amplifier 0.7~2.7GHz, 120W

Item No.: AVBR0727H51
The AVBR0727H51 is a 120W high gain Solid State Linear High Power Amplifier. This amplifier module utilizes the latest high power RF GaN transistors and also features high efficiency and linearity, with protection functions to ensure high availability. This amplifier is suitable for Linear System and high power combination.
INQUIRY
Description
The AVBR0727H51 is a 120W high gain Solid State Linear High Power Amplifier. This amplifier module utilizes the latest high power RF GaN transistors and also features high efficiency and linearity, with protection functions to ensure high availability. This amplifier is suitable for Linear System and high power combination.

Features
0.7GHz-2.7GHz frequency range Solid-state Class AB Broadband design
Psat 51dBm Typ, 50dBm Min Instantaneous ultra-broadband
Power gain 50dB   Suitable for CW, and Pulse
50 ohm input/output impedance Small and lightweight
Built-in control, monitoring and protection circuits High reliability and ruggedness
ELECTRICAL SPECIFICATIONS(T=25℃,DC Voltage= 28V, Load VSWR ≤ 1.2)
Description Symbol Min Typ Max Unit
Operating Frequency BW 0.7   2.7 GHz
Output Power CW [ Pin= 0 dBm] Psat 50 51   dBm
Power Gain @ PSAT Gp   50   dB
Power Gain Flatness @ Rated PSAT ∆Gp   ±1.3 ±1.8 dB
Input Power for Rated PSAT PIN   0   dBm
Harmonics @ Pout =50W 2nd /3rd   -20/-25 -15/-18 dBc
Noise Figure(If Needed, Please Contact) NF   8 10 dB
Spurious Signals@ Pout =50W Spur   -70 -65 dBc
Input VSWR VSWR_in   1.3 1.5 /
Output VSWR VSWR_out   1.5 2 /
Third Order Intercept Point
2-Tone @ 41dBm/Tone, 1MHz Space(If Needed, Please Contact)
 
OIP3
   
54
   
dBm
Operating Voltage VDC 26 28 30 V
Current Consumption @Pout=100~120W IDD   12.5 16.0 Amp
Current Consumption @ Shutdown ISD   0.1 0.2 Amp
Quiescent Current IDQ   3 4 Amp
Switching Time @ 1kHz TTL, PIN = -2dBm TON/TOFF   1 3 µs
 
 
MECHANICAL SPECIFICATIONS
Cooling External Heat Sink Needed (Not Supplied)
Length*Width*Height mm 180x140x25 
Weight[ Kg ] 1.6
RF Connector Input SMA, Female
RF Connector Output Type-N, Female
   
ENVIRONMENTAL SPECIFICATIONS(Design to meet)
Module Operation Temperature*1 -20 65
Storage Temperature Range     -45 85
Relative-Humidity   95 %
Altitude *2 N/A    
Vibration/Shock *2 N/A    
Notes *1: Module Operation Temperature can be extended to -45~85℃, Contact Sales for update.
Notes *2: Altitude /Vibration are designed with considerations, but without tests and experiments.
LIMITS
Input RF drive level without damage Pin≤10 dBm
Load VSWR @ POUT =80W ∞ @ all load phase & amplitude for duration of 1 minutes;
Load VSWR @ POUT =100W 3:1 @ all load phase & amplitude continuous
Thermal Degradation 90
     
 
DC INTERFACE CONNECTOR – [Hybrid D-Sub 7W2, Male]
Pin # Description Specifications
A1 GND Ground
A2 VDD 28VDC
1 CURRENT SENSE Analog voltage relative to IDD @ 100mV per Ampere
2 TEMP SENSE Analog voltage relative to Module’s Temperature @ 10 mV/°C
3 ENABLE Amplifier Enable: TTL Logic High (3.3V) (Internally Pulled-Low)
4 GND Ground
5 N/C No Connection